unisonic technologies co., ltd 10n90 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-502.a 10 amps, 900 volts n-channel power mosfet ? description the utc 10n90 is a n-channel mode power fet using utc?s advanced technology to provide costumers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching per formance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 10n90 is generally applied in high efficiency switch mode power supply. ? features * lower leakage current: 25a (max.) @ v ds = 900v * improved gate charge ? symbol 1.gate 3.source 2.drain 1 to-220 1 to-220f1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 10n90l-ta3-t 10n90g-ta3-t to-220 g d s tube 10N90L-TF1-T 10n90g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
10n90 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-502.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v continuous i d 10 a drain current pulsed (note 1) i dm 40 a avalanche current (note 1) i ar 10 a single pulsed (note 2) e as 794 mj avalanche energy repetitive (note 1) e ar 28 mj peak diode recovery dv/dt (note 3) dv/dt 1.5 v/ns to-220 156 w power dissipation to-220f1 p d 50 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit to-220 62.5 c/w junction to ambient to-220f1 ja 62.5 c/w to-220 0.8 c/w junction to case to-220f1 jc 2.5 c/w
10n90 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-502.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 900 v breakdown voltage temperature coefficient bv dss /t j i d =250 1.11 v/c drain-source leakage current i dss v ds =900v 25 a forward v gs =+30v 100 na gate- source leakage current reverse i gss v gs =-30v -100 na on characteristics gate threshold voltage v gs(th) v ds =5v, i d =250a 2.0 3.5 v static drain-source on-state resistance r ds(on) v gs =10v, i d =5a 1.2 ? forward transconductance g fs v ds =50v, i d =5a (note 4) 7.85 s dynamic parameters input capacitance c iss 2760 3580 pf output capacitance c oss 245 290 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 105 125 pf switching parameters total gate charge q g 127 165 nc gate to source charge q gs 19.2 nc gate to drain charge q gd v gs =10v, v ds =720v, i d =10a (note 4, 5) 56.8 nc turn-on delay time t d(on) 29 70 ns rise time t r 54 20 ns turn-off delay time t d(off) 161 330 ns fall-time t f v dd =450v, i d =10a, r g =9.6 ? (note 4, 5) 47 105 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 10 a maximum body-diode pulsed current (note1) i sm integral reverse pn-diode in the mosfet 40 a drain-source diode forward voltage (note 4) v sd i s =10a, v gs =0v, t j =25c 1.4 v body diode reverse recovery time t rr 690 ns body diode reverse recovery charge q rr i f =10a, di f /dt=100a/s, t j =25c (note 4) 11.94 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 15mh, i as = 10a, v dd = 50v, r g = 27 ? , starting t j = 25c 3. i sd 10a, di/dt 190a/s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 250s, duty cycle 2% 5. essentially independent of operating temperature
10n90 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-502.a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
10n90 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-502.a v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v f body diode forward voltage drop i fm , body diode forward current driver
10n90 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-502.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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